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| MP6759 TOSHIBA GTR Module Silicon N Channel IGBT MP6759 Motor Control Applications High Power Switching Applications Unit: mm * * * * * The electrodes are isolated from case. 6 IGBTs are built into 1 package. Enhancement-mode Low saturation voltage : VCE (sat) = 2.7 V (max) (IC = 10 A) High speed: tf = 0.35 s (max) (IC = 10 A) JEDEC JEITA TOSHIBA 2-78A1A Maximum Ratings (Ta = 25C) Characteristics Collector-emitter voltage Gate-emitter voltage Collector current DC 1 ms DC 1 ms Symbol VCES VGES IC ICP IF IFM PC Tj Tstg VIsol Weight: 44 g (typ.) Rating 600 20 10 20 10 20 40 150 -40 to 125 2500 (AC 1 minute) 1.5 Unit V V A Forward current A Collector power dissipation (Tc = 25C) Junction temperature Storage temperature range Isolation voltage Screw torque W C C V N*m 1 2002-11-20 MP6759 Equivalent Circuit + GU (BU) GV (BV) GW (BW) U V W GX (BX) - GY (BY) GZ (BZ) Electrical Characteristics (Ta = 25C) Characteristics Gate leakage current Collector cut-off current Gate-emitter cut-off voltage Collector-emitter saturation voltage Input capacitance Rise time Turn-on time Switching time Fall time Turn-off time Forward voltage Reverse recovery time Thermal resistance tf toff VF trr Rth (j-c) IF = 10 A, VGE = 0 V IF = 10 A, di/dt = -100 A/s Transistor Diode Symbol IGES ICES VGE (off) VCE (sat) Cies tr 30 ton 15 V 0V -15 V 100 Test Condition VGE = 20 V, VCE = 0 V VCE = 600 V, VGE = 0 V IC = 1 mA, VCE = 5 V IC = 10 A, VGE = 15 V VCE = 10 V, VGE = 0 V, f = 1 MHz Min 5 300 V Typ. 2.1 720 0.3 0.4 0.2 0.4 Max 200 1 8 2.7 s 0.35 2.0 200 3.09 4.77 V ns C/W Unit nA mA V V pF 2 2002-11-20 MP6759 IC - VCE 20 Common emitter Tc = 25C 16 20 16 15 13 Common emitter VCE - VGE (V) Tc = -40C 12 (A) IC 12 Collector current 12 Collector-emitter voltage VCE 8 8 20 4 IC = 5 A 10 4 VGE = 11 V 0 0 1 2 3 4 5 0 0 4 8 12 16 20 Collector-emitter voltage VCE (V) Gate-emitter voltage VGE (V) VCE - VGE 16 Common emitter 16 Common emitter VCE - VGE (V) Tc = 25C 12 (V) Tc = 125C 12 VCE Collector-emitter voltage 8 Collector-emitter voltage VCE 20 8 4 IC = 5 A 10 4 IC = 5 A 10 20 0 0 4 8 12 16 20 0 0 4 8 12 16 20 Gate-emitter voltage VGE (V) Gate-emitter voltage VGE (V) IC - VGE 20 Common emitter VCE = 5 V 16 IC Collector current (A) 12 8 Tc = 125C 4 25 -40 0 0 4 8 12 16 20 Gate-emitter voltage VGE (V) 3 2002-11-20 MP6759 Switching Time - IC 1 Common emitter VCC = 300 V VGE = 15 V RG = 100 Tc = 25C ton tf 0.1 tr 0.05 0.03 0.02 1 3 5 10 30 50 100 0.1 10 30 5 3 Switching Time - RG Common emitter VCC = 300 V VGE = 15 V IC = 10 A Tc = 25C 0.5 (s) toff 0.3 Switching time Switching time (s) 1 ton tr 0.5 toff 0.3 tf Collector current IC (A) 50 100 300 500 1000 Gate resistance RG () VCE, VGE - QG 20 Common emitter RL = 30 Tc = 25C 3000 C - VCE (V) VCE 16 VCE = 0 V 12 300 100 8 1000 (pF) Cies 300 Collector-emitter voltage Capacitance C 100 Coes Common emitter VGE = 0 V f = 1 MHz Tc = 25C 1 3 10 30 100 200 30 4 10 5 0.5 8 16 24 32 40 Cres 300 1000 0 0 Collector-emitter voltage Charge QG (nQ) VCE (V) IF - VF 20 VGE = 0 V 16 10 trr, Irr - IF Peak reverse recovery current Irr (A) Reverse recovery time trr (x100 ns) Common cathode 5 trr 3 Forward current IF (A) 12 Tc = 125C 8 25 -40 1 0.5 0.3 Irr 4 0 0 0.4 0.8 1.2 1.6 2.0 0.1 0 Common cathode di/dt = 100 A/s VGE = -10 V Tc = 25C 4 8 12 16 Forward voltage VF (V) Forward current IF (A) 4 2002-11-20 MP6759 Rth - tw 100 50 30 10 Thermal transient resistance Rth (C/W) Diode 5 3 IGBT 1 0.5 0.3 0.1 0.05 0.03 Tc = 25C 0.01 0.001 0.01 0.1 1 10 100 1000 Pulse width tw (s) Safe Operating Area 40 100 Reverse Bias Area Tj 125C VGE = 15 V RG = 100 30 (A) IC Collector current 10 100 s* 1 s* 1 ms* Collector current 1000 IC 20 10 0 0 IC max (continuous) DC operation 1 *: Single nonrepetitive pulse Tc = 25C Curves must be derated linearly with increase in temperature. 1 10 10 ms* 100 0.1 0.1 (A) IC max (pulsed)* 50 s* Collector-emitter voltage VCE (V) 200 400 600 800 Collector-emitter voltage VCE (V) 5 2002-11-20 MP6759 RESTRICTIONS ON PRODUCT USE 000707EAA * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. * The information contained herein is subject to change without notice. 6 2002-11-20 |
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